AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：0
|
作者：
WAGNER, S [1 ]
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C444 / C444
页数：1
相关论文
共 50 条
  • [1] Growth chemistry of amorphous silicon and amorphous silicon-germanium alloys
    Dalal, VL
    [J]. CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2002, 6 (05): : 455 - 464
  • [2] CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
    LUFT, W
    [J]. CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 218 - 223
  • [3] Boron diffusion in amorphous silicon-germanium alloys
    Edelman, L. A.
    Phen, M. S.
    Jones, K. S.
    Elliman, R. G.
    Rubin, L. M.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (17)
  • [4] Metastable defects in the amorphous silicon-germanium alloys
    Cohen, JD
    [J]. AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 : 51 - 62
  • [5] Quantitative ASAXS of germanium inhomogeneities in amorphous silicon-germanium alloys
    Goerigk, G
    Williamson, DL
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 281 (1-3) : 181 - 188
  • [6] 1/f noise in amorphous silicon and silicon-germanium alloys
    Johanson, RE
    Günes, M
    Kasap, SO
    [J]. NOISE AS A TOOL FOR STUDYING MATERIALS, 2003, 5112 : 61 - 66
  • [7] FEMTOSECOND SPECTROSCOPY IN AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS
    FAUCHET, PM
    HULIN, D
    MIGUS, A
    ANTONETTI, A
    CONDE, JP
    WAGNER, S
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 145 - 148
  • [8] ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS
    STUTZMANN, M
    TSAI, CC
    STREET, RA
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1011 - 1014
  • [9] VIBRATIONAL PROPERTIES OF AMORPHOUS SILICON-GERMANIUM ALLOYS AND SUPERLATTICES
    BOUCHARD, AM
    BISWAS, R
    KAMITAKAHARA, WA
    GREST, GS
    SOUKOULIS, CM
    [J]. PHYSICAL REVIEW B, 1988, 38 (15): : 10499 - 10506
  • [10] OPTOELECTRONIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON-GERMANIUM ALLOYS
    CONTE, G
    DELLASALA, D
    GALLUZZI, F
    GRILLO, G
    OSTRIFATE, C
    REITA, C
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (08) : 890 - 893
12345