Detection of recombination inhomogeneities in amorphous silicon

被引：0
|
作者：
Dzyubenko, G.M.
Zarif'yants, Yu.A.
Obyden, S.K.
Perlovskiy, G.A.
Saparin, G.V.
Chukichev, M.V.
机构：
来源：
Soviet journal of communications technology & electronics | 1988年 / 33卷 / 09期
关键词：
Amorphous Silicon - Electron Beam Recording - Recombination Inhomogeneities - Scanning Electron Microscope - Schottky Diodes;
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学科分类号：
摘要：
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页码：153 / 154
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