Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

被引：105

作者：

Jensen, N ^{[1
]}

Rau, U ^{[1
]}

Hausner, RM ^{[1
]}

Uppal, S ^{[1
]}

Oberbeck, L ^{[1
]}

Bergmann, RB ^{[1
]}

Werner, JH ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 05期

关键词：

D O I：

10.1063/1.372230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This article investigates limitations to the open circuit voltage of n-type amorphous silicon/p-type crystalline silicon heterojunction solar cells. The analysis of quantum efficiency and temperature dependent current/voltage characteristics identifies the dominant recombination mechanism. Depending on the electronic quality of the crystalline silicon absorber, either recombination in the neutral bulk or recombination in the space charge region prevails; recombination at the heterointerface is not relevant. Although interface recombination does not limit the open circuit voltage, recombination of photogenerated charge carriers at the heterointerface or in the amorphous silicon emitter diminishes the short circuit current of the solar cells. (C) 2000 American Institute of Physics. [S0021-8979(00)07105-X].

引用

页码：2639 / 2645

页数：7

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