Processing, characterization and modeling of AlGaN/GaN HEMTs

被引:0
|
作者
Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, SE-41296 Gothenburg, Sweden [1 ]
机构
来源
Doktorsavh. Chalmers Tek. Hogsk. | 2006年 / 2416卷 / 1-64期
关键词
High electron mobility transistors;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications
    Garcia-Luque, A.
    Martin-Guerrero, T. M.
    Pradhan, M.
    Moser, M.
    Alomari, M.
    Burghartz, J. N.
    Schoch, B.
    Sharma, K.
    Kallfass, I
    2022 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2022,
  • [22] Circuit-Based Hydrodynamic Modeling of AlGaN/GaN HEMTs
    Ludwig, Florian
    Bauer, Maris
    Lisauskas, Alvydas
    Roskos, Hartmut G.
    49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019), 2019, : 270 - 273
  • [23] Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
    Turuvekere, Sreenidhi
    Karumuri, Naveen
    Rahman, A. Azizur
    Bhattacharya, Arnab
    DasGupta, Amitava
    DasGupta, Nandita
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3157 - 3165
  • [24] Modeling of the Reverse Gate Leakage Current of AlGaN/GaN HEMTs
    Cai, Feiyang
    Xia, Guangrui
    Li, Simon
    Fu, Yue
    PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 697 - 700
  • [25] The Temperature Dependent TCAD and SPICE Modeling of AlGaN/GaN HEMTs
    Yuan, Li
    Wang, Weizhu
    Lee, Kean Boon
    Sun, Haifeng
    Selvaraj, Susai Lawrence
    Zhou, Xing
    Lo, Guo-Qiang
    PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC), 2013, : 115 - 118
  • [26] Electroluminescence in AlGaN/GaN HEMTS
    Ohno, Y
    Nakao, T
    Akita, M
    Kishimoto, S
    Maezawa, K
    Mizutani, T
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 119 - 124
  • [27] Deep Trap Characterization and the Kink Effect in AlGaN/GaN HEMTs
    Mukherjee, Jayjit
    Malik, Amit
    Vinayak, Seema
    Rawal, D. S.
    Dhaka, Rajendra S.
    IETE TECHNICAL REVIEW, 2022, 39 (02) : 335 - 342
  • [28] Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
    Thorsell, M.
    Andersson, K.
    Fagerlind, M.
    Sudow, M.
    Nilsson, P. -A.
    Rorsman, N.
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 462 - 465
  • [29] Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
    Thorsell, M.
    Andersson, K.
    Fagerlind, M.
    Suedow, M.
    Nilsson, P-A
    Rorsman, N.
    2008 WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE- WAVE CIRCUITS (INMMIC), 2008, : 13 - 16
  • [30] Fabrication and Characterization of Flexible AlGaN/GaN HEMTs on Kapton Tape
    Hsu, Keng-Li
    Wu, Meng-Chyi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3320 - 3324