The Temperature Dependent TCAD and SPICE Modeling of AlGaN/GaN HEMTs

被引：0
|
作者：
Yuan, Li [1 ]
Wang, Weizhu [1 ]
Lee, Kean Boon [1 ]
Sun, Haifeng [1 ]
Selvaraj, Susai Lawrence [1 ]
Zhou, Xing
Lo, Guo-Qiang [1 ]
机构：
[1] A STAR Agency Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore
来源：
PROCEEDINGS OF THE 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extracted from the TCAD simulation. Based on that, the compact SPICE device model of HEMTs has been built up, which can be used for DC/transient: SPICE simulation and power electronics circuit demonstration. The SPICE modeling results agree well with our TCAD simulation, indicating good revealing of the physical mechanisms of the AlGaN/GaN HEMTs' operation.
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页码：115 / 118
页数：4
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