Analytical Modeling of the Temperature Dependent Microwave Noise in AlGaN/GaN HEMTs

被引：1
|
作者：
Liu, Z. H. [1 ,2 ]
Ng, G. I. [1 ,2 ]
Arulkumaran, S. [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Nanjing Univ Technol, MMIC Design Ctr, Temasek Lab@NTU, Singapore 637553, Singapore
来源：
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年
关键词：
GaN; HEMT; noise; temperature dependence; modeling; FREQUENCY; PARAMETERS;
D O I：
10.1109/RFIT.2009.5383707
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from -50 to 200 degrees C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic relationship. An analytical model for the overall noise parameters including temperature dependence is proposed based on the Pucel's PRC model and verified with the measured temperature-dependent noise parameters. The feedback capacitance C-gd was found to be important to accurately simulate all the measured noise parameters over temperature.
引用
收藏
页码：276 / 279
页数：4
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