Temperature dependent degradation modes in AlGaN/GaN HEMTs

被引：0

作者：

Douvry, Y. ^{[1
]}

Hoel, V. ^{[1
]}

De Jaeger, J. -C. ^{[1
]}

Defrance, N. ^{[1
]}

Sury, C. ^{[2
]}

Malbert, N. ^{[2
]}

Labat, N. ^{[2
]}

Curutchet, A. ^{[2
]}

Dua, C. ^{[3
]}

Oualli, M. ^{[3
]}

Piazza, M. ^{[3
]}

Bluet, J. -M. ^{[4
]}

Chikhaoui, W. ^{[4
]}

Bru-Chevallier, C. ^{[4
]}

机构：

[1] Univ Lille 1, IEMN, UMR CNRS 8520, F-59655 Villeneuve Dascq, France

[2] Univ Bordeaux 1, IMS Lab, F-33405 Talence, France

[3] ALCATEL THALES 3 5 Lab, F-91461 Marcoussis, France

[4] Univ Lyon 1, INL, F-69100 Villeurbanne, France

来源：

2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work is a study of the degradation of AlGaN/GaN HEMTs generated by different ageing tests. The methodology is based on cross-characterisation analyses. The life tests (HTO 175 degrees C, HTO 250 degrees C, HTO 275 degrees C and HTO 320 degrees C) have mainly caused a strong decrease of the drain current at the very beginning of the test, then its partial recovery and finally its collapse. No evident degradation of the Schottky contact is observed after stress at different temperatures. Moreover, pulsed I-V measurements show an important evolution of gate lag and drain lag rates after ageing. Low frequency drain current noise increases after the life test and the highest the life test temperature, the highest the noise level increase.

引用

页码：114 / 117

页数：4

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