Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

被引：0
|
作者：
Thorsell, M. [1 ]
Andersson, K. [1 ]
Fagerlind, M. [1 ]
Sudow, M. [1 ]
Nilsson, P. -A. [1 ]
Rorsman, N. [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, GigaHertz Ctr, SE-41296 Gothenburg, Sweden
来源：
2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年
关键词：
Noise; gallium-nitride; thermal;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency noise performance of the AlGaN/GaN-HEMT. The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.
引用
收藏
页码：462 / 465
页数：4
相关论文
共 50 条
  • [1] Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs
    Lee, S
    Webb, KJ
    Tilak, V
    Eastman, LF
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (05) : 1567 - 1577
  • [2] Intrinsic noise characteristics of AlGaN/GaN HEMTs
    Lee, SJ
    Tilak, V
    Webb, KJ
    Eastman, LF
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 1415 - 1418
  • [3] Thermal Characterization of Field Plated AlGaN/GaN HEMTs
    Dundar, Canberk
    Donmezer, Nazli
    PROCEEDINGS OF THE 2019 EIGHTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2019), 2019, : 755 - 760
  • [4] Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon
    Kuzmík, J
    Bychikhin, S
    Neuburger, M
    Dadgar, A
    Krost, A
    Kohn, E
    Pogany, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) : 1698 - 1705
  • [5] 1/f Noise in GaN/AlGaN HEMTs
    Fleetwood, D. M.
    Wang, P.
    Chen, J.
    Jiang, R.
    Zhang, E. X.
    McCurdy, M. W.
    Schrimpf, R. D.
    2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 45 - 48
  • [6] Low frequency noise in ion implanted GaN/AlGaN/GaN and AlGaN/GaN HEMTs
    Nakajima, M.
    Ohsawa, T.
    Hishiya, M.
    Nomoto, K.
    Nakamura, T.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS, 2008, (26): : 79 - 82
  • [7] Microwave noise performance of AlGaN/GaN HEMTs
    Ping, AT
    Piner, E
    Redwing, J
    Khan, MA
    Adesida, I
    ELECTRONICS LETTERS, 2000, 36 (02) : 175 - 176
  • [8] Electroluminescence characterization of AlGaN/GaN HEMTs
    Lossy, Richard
    Glowacki, Arkadiusz
    Boit, Christian
    Wuerfl, Joachim
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1382 - +
  • [9] Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
    Pavlidis, Georges
    Kendig, Dustin
    Heller, Eric R.
    Graham, Samuel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (05) : 1753 - 1758
  • [10] Thermal reliability of deuterated AlGaN/GaN HEMTs
    Arreola-Pina, A. S.
    Mimila-Arroyo, J.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 123
12345