Electroluminescence characterization of AlGaN/GaN HEMTs

被引：10
|
作者：
Lossy, Richard [1 ]
Glowacki, Arkadiusz [2 ]
Boit, Christian [2 ]
Wuerfl, Joachim [1 ]
机构：
[1] Ferdinand Braun Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[2] Tech Univ Berlin, D-10587 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期
关键词：
ELECTRON-MOBILITY TRANSISTORS; BREAKDOWN;
D O I：
10.1002/pssc.200881537
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microscopic electroluminescence (EL) measurements on AlGaN/GaN high-electron-mobility transistors are reported. Photon emission is detected from front side and also from the backside of the wafer. Using both detection geometries manufacturing related dependencies can beidentified. Investigation of EL from backside during pinch-off operation reveals detailed emission pattern that are partially hidden during front side observation. Spectrally resolved photon emission shows different pattern for on-state and off-state condition. (C) 2009 WILEY-VCH Verlaq GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1382 / +
页数：2
相关论文
共 50 条
  • [1] Electroluminescence in AlGaN/GaN HEMTS
    Ohno, Y
    Nakao, T
    Akita, M
    Kishimoto, S
    Maezawa, K
    Mizutani, T
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 119 - 124
  • [2] Reliability Investigations of AlGaN/GaN HEMTs Based on On-State Electroluminescence Characterization
    Zeng, Chang
    Wang, Yuan-Sheng
    Liao, Xue-Yang
    Li, Ru-Guan
    Chen, Yi-Qiang
    Lai, Ping
    Huang, Yun
    En, Yun-Fei
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2015, 15 (01) : 69 - 74
  • [3] Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
    Bouya, M.
    Carisetti, D.
    Malbert, N.
    Labat, N.
    Perdu, P.
    Clement, J. C.
    Bonnet, M.
    Pataut, G.
    MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1630 - 1633
  • [4] Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs
    Narita, T.
    Fujimoto, Y.
    Wakejima, A.
    Egawa, T.
    ELECTRONICS LETTERS, 2014, 50 (16) : 1162 - 1163
  • [5] AlGaN/GaN HEMTS: material, processing, and characterization
    F. Calle
    T. Palacios
    E. Monroy
    J. Grajal
    M. Verdú
    Z. Bougrioua
    I. Moerman
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 271 - 277
  • [6] Processing, characterization and modeling of AlGaN/GaN HEMTs
    Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
    Doktorsavh. Chalmers Tek. Hogsk., 2006, 2416 (1-64):
  • [7] Characterization of transient behavior of AlGaN/GaN HEMTs
    Mizutani, T.
    GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473
  • [8] AlGaN/GaN HEMTS:: material, processing, and characterization
    Calle, F
    Palacios, T
    Monroy, E
    Grajal, J
    Verdú, M
    Bougrioua, Z
    Moerman, I
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (5-7) : 271 - 277
  • [9] Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
    Santashraya Prasad
    Amit Krishna Dwivedi
    Aminul Islam
    Journal of Computational Electronics, 2016, 15 : 172 - 180
  • [10] Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
    Prasad, Santashraya
    Dwivedi, Amit Krishna
    Islam, Aminul
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (01) : 172 - 180
12345