Electroluminescence characterization of AlGaN/GaN HEMTs

被引：10

作者：

Lossy, Richard ^{[1
]}

Glowacki, Arkadiusz ^{[2
]}

Boit, Christian ^{[2
]}

Wuerfl, Joachim ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[2] Tech Univ Berlin, D-10587 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期

关键词：

ELECTRON-MOBILITY TRANSISTORS; BREAKDOWN;

D O I：

10.1002/pssc.200881537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microscopic electroluminescence (EL) measurements on AlGaN/GaN high-electron-mobility transistors are reported. Photon emission is detected from front side and also from the backside of the wafer. Using both detection geometries manufacturing related dependencies can beidentified. Investigation of EL from backside during pinch-off operation reveals detailed emission pattern that are partially hidden during front side observation. Spectrally resolved photon emission shows different pattern for on-state and off-state condition. (C) 2009 WILEY-VCH Verlaq GmbH & Co. KGaA, Weinheim

引用

页码：1382 / +

页数：2

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