AN IMPROVED DC MODEL FOR AlGaN/GaN HEMTs

被引：0

作者：

Shen, Li ^{[1
]}

Chen, Bo ^{[1
]}

Sun, Ling ^{[2
]}

Luo, Danting ^{[1
]}

Gao, Jianjun ^{[1
]}

机构：

[1] E China Normal Univ, Sch Informat Sci & Technol, Shanghai 200062, Peoples R China

[2] Nantong Univ, Jiangsu Key Lab ASIC Design, Nantong 226019, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2015年 / 57卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1002/mop.29008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Improved empirical model for the DC I-V characteristics of a GaN High electron mobility transistor HEMT) is presented in this article. The improvement consists in allowing the Curtice model parameters to vary with gate-source voltage. Model parameter extraction is made for a 100 mu m gate-width GaN HEMT. A good agreement is obtained between modeled results and measured results. (C) 2015 Wiley Periodicals, Inc.

引用

页码：1027 / U305

页数：4

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