Improved Passivation Techniques for AlGaN/GaN HEMTs

被引：1

作者：

Anderson, T. J. ^{[1
]}

Koehler, A. D. ^{[1
]}

Tadjer, M. J. ^{[1
]}

Hobart, K. D. ^{[1
]}

Nepal, N. ^{[1
]}

Feygelson, T. I. ^{[1
]}

Pate, B. B. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Kub, F. J. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6 | 2013年 / 58卷 / 08期

关键词：

IN-SITU;

D O I：

10.1149/05808.0041ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

AlGaN/GaN power high electron mobility transistor (HEMT) performance is limited by current collapse and off-state gate and drain leakage current. A series of studies to improve these properties through optimized surface cleaning, as well as the implementation of novel materials, such as AlN and nanocrystalline diamond, is presented. Reduced leakage currents, degradation of dynamic ON-resistance, and current collapse ratio quantify improvement in HEMT performance. DC I-V measurements, pulsed I-V measurements, and a boost converter test circuit is used to validate these properties.

引用

页码：41 / 46

页数：6

共 50 条

[1] An alternative passivation approach for AlGaN/GaN HEMTs
Lin, Heng-Kuang
Yu, Hsiang-Lin
Huang, Fan-Hsiu
[J]. SOLID-STATE ELECTRONICS, 2010, 54 (05) : 552 - 556
[2] Improved Microwave Noise Performance by SiN Passivation in AlGaN/GaN HEMTs on Si
Liu, Z. H.
Arulkumaran, S.
Ng, G. I.
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (06) : 383 - 385
[3] A comparative study of surface passivation on AlGaN/GaN HEMTs
Lu, W
Kumar, V
Schwindt, R
Piner, E
Adesida, I
[J]. SOLID-STATE ELECTRONICS, 2002, 46 (09) : 1441 - 1444
[4] AN IMPROVED DC MODEL FOR AlGaN/GaN HEMTs
Shen, Li
Chen, Bo
Sun, Ling
Luo, Danting
Gao, Jianjun
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (05) : 1027 - U305
[5] Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
Bouya, M.
Carisetti, D.
Malbert, N.
Labat, N.
Perdu, P.
Clement, J. C.
Bonnet, M.
Pataut, G.
[J]. MICROELECTRONICS RELIABILITY, 2007, 47 (9-11) : 1630 - 1633
[6] Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs
Bernát, J
Javorka, P
Fox, A
Marso, M
Lüth, H
Kordos, P
[J]. SOLID-STATE ELECTRONICS, 2003, 47 (11) : 2097 - 2103
[7] High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
谭鑫
吕元杰
顾国栋
王丽
敦少博
宋旭波
郭红雨
尹甲运
蔡树军
冯志红
[J]. Journal of Semiconductors, 2015, (07) : 98 - 101
[8] High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
Tan Xin
Lu Yuanjie
Gu Guodong
Wang Li
Dun Shaobo
Song Xubo
Guo Hongyu
Yin Jiayun
Cai Shujun
Feng Zhihong
[J]. JOURNAL OF SEMICONDUCTORS, 2015, 36 (07)
[9] Fabrication and Improved Performance of AlGaN/GaN HEMTs with Regrown Ohmic Contacts and Passivation-First Process
Huang, Tongde
Liu, Chao
Bergsten, Johan
Jiang, Huaxing
Lau, Kei May
Rorsman, Niklas
[J]. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
[10] Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?
Flynn, JS
Xin, H
Dion, JA
Hutchins, EL
Antunes, H
Fieschi-Corso, L
Van Egas, R
Brandes, GR
[J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2327 - 2330

← 1 2 3 4 5 →