Electroluminescence in AlGaN/GaN HEMTS

被引：0

作者：

Ohno, Y ^{[1
]}

Nakao, T ^{[1
]}

Akita, M ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroluminescence in AlGaN/GaN HEMTs biased at high drain-source voltages has been investigated. The electroluminescence was observed at the drain edge. This is quite different from the case of AlGaAs/GaAs HEMTs in which the electroluminescence was observed at the gate edge. 2D device simulation was performed to investigate the difference in the EL distribution, The results show that high-density surface traps cause the formation of high-field region at the drain edge. Electroluminescence spectroscopy was also performed. A broad spectrum was obtained in a wavelength range of visible to near-infrared light with a polarization in the direction of parallel to the drain current.

引用

页码：119 / 124

页数：6

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