Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications

被引：0

作者：

Garcia-Luque, A. ^{[1
]}

Martin-Guerrero, T. M. ^{[1
]}

Pradhan, M. ^{[2
]}

Moser, M. ^{[2
]}

Alomari, M. ^{[2
]}

Burghartz, J. N. ^{[2
]}

Schoch, B. ^{[3
]}

Sharma, K. ^{[3
]}

Kallfass, I ^{[3
]}

机构：

[1] Univ Malaga, Telecommun Res Inst TELMA, Malaga 29010, Spain

[2] Inst Mikroelekt Stuttgart IMS CHIPS, D-70569 Stuttgart, Germany

[3] Inst Robust Power Semicond Syst ILH, D-70569 Stuttgart, Germany

来源：

2022 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2022年

关键词：

High-Electron Mobility Transistor (HEMT); Aluminium Gallium Nitride (AlGaN/GaN); RF-Modeling;

D O I：

10.1109/INMMIC54248.2022.9762081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate HEMT equivalent model extraction strategy is described and tested for the RF performance of AlGaN/GaN high-power devices. This method provides the extrinsic and intrinsic small-signal components, which are key in estimating its frequency response, from multi-bias S-parameters. After the DC+RF characterization, the extraction is carried out from a 0.05 GHz to 38 GHz range with high model fidelity. This procedure shows that it is feasible to build a valid HEMT small signal model as basis for subsequent large-signal development of millimetre-wave RF-GaN circuit integrated prototypes.

引用

页数：3

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