Progress in high-power, high frequency AlGaN/GaN HEMTs

被引：0
|
作者：
Eastman, LF [1 ]
Tilak, V
Kaper, V
Smart, J
Thompson, R
Green, B
Shealy, JR
Prunty, T
机构：
[1] Cornell Univ, ECE, Ithaca, NY 14853 USA
[2] Cornell Univ, CNF, Ithaca, NY 14853 USA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2002年 / 194卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200212)194:2<433::AID-PSSA433>3.0.CO;2-R
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fundamental concepts and processing of undoped, polarization-induced 2DEG AlGaN/GaN HEMTs are covered, along with device characterization. Special care is required to stabilize surface state charge with passivation. Frequency response and drain voltage breakdown are determined experimentally, and temperature rise is simulated. Gate width, loading, and the effect of channel differences in phase, in manifold HEMTs are considered for their impact on drain efficiency. Normalized power limits of 11-12 W/mm in single-channel devices and similar to6.5 W/mm in 1.5 mm devices are presented.
引用
收藏
页码：433 / 438
页数：6
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