RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond

被引：55

作者：

Hirama, Kazuyuki ^{[1
]}

Kasu, Makoto ^{[1
]}

Taniyasu, Yoshitaka ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

关键词：

AlGaN/GaN high-electron-mobility transistors; diamond; RF large-signal measurements; DENSITY;

D O I：

10.1109/LED.2012.2185678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We epitaxially grow AlGaN/GaN high-electron-mobility transistors (HEMTs) on IIa-type single-crystal diamond (111) substrates. A 0.4-mu m gate-length HEMT showed a dc drain-current density I-DS of 770 mA/mm and a breakdown voltage of 165 V. In the RF large-signal measurements at 1 GHz, an RF output-power density P-OUT of 2.13 W/mm was obtained. This is the first report of RF power operation of AlGaN/GaN HEMTs epitaxially grown on diamond. The AlGaN/GaN HEMTs epitaxially grown on diamond showed a low thermal resistance of 1.5 K . mm/W.

引用

页码：513 / 515

页数：3

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