High-Power and Low-Loss Ku-Band GaN HEMT Switch with Inductive Resonator to Compensate for Off-Capacitance of HEMT

被引：0
|
作者：
Kawamura, Yoshifumi [1 ]
Saito, Tetsunari [2 ]
Endo, Kunihiro [3 ]
Tsuru, Masaomi [1 ]
Yamanaka, Koji [1 ]
机构：
[1] Information Technology RandD Center, Mitsubishi Electric Corporation, 5-1-1 Ofuna, Kamakura, Kanagawa,247-8501, Japan
[2] Mitsubishi Electric Corporation, High Frequency and Optical Device Works, Japan
[3] Mitsubishi Electric Corporation, Kamakura Works, Japan
来源：
Asia-Pacific Microwave Conference Proceedings, APMC | 2022年 / 2022-November卷
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
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中图分类号：
学科分类号：
摘要：
Capacitance - Gallium nitride - III-V semiconductors - Insertion losses - Microwave devices - Microwave resonators
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页码：722 / 724
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