High-Power and Low-Loss Ku-Band GaN HEMT Switch with Inductive Resonator to Compensate for Off-Capacitance of HEMT

This paper presents a high-power and low-loss Ku-band GaN high-electron-mobility transistor switch with an asymmetric series-shunt/shunt configuration. The proposed switch has field-effect transistors (FETs) with inductive resonators to compensate for the off-capacitance of the FETs. By using the circuit topology, the switch can achieve high-power handling performance in the Transmitter (Tx) mode and a low insertion loss in the Receiver (Rx) mode. The measured insertion loss was <1.0 dB, and the measured isolation was >30 dB at a 10% relative bandwidth in the Ku band. The fabricated switch achieved a power-handling capability of 10 W.