High-Power and Low-Loss Ku-Band GaN HEMT Switch with Inductive Resonator to Compensate for Off-Capacitance of HEMT

被引：0

作者：

Kawamura, Yoshifumi ^{[1
]}

Saito, Tetsunari ^{[2
]}

Endo, Kunihiro ^{[3
]}

Tsuru, Masaomi ^{[1
]}

Yamanaka, Koji ^{[1
]}

机构：

[1] Information Technology RandD Center, Mitsubishi Electric Corporation, 5-1-1 Ofuna, Kamakura, Kanagawa,247-8501, Japan

[2] Mitsubishi Electric Corporation, High Frequency and Optical Device Works, Japan

[3] Mitsubishi Electric Corporation, Kamakura Works, Japan

来源：

Asia-Pacific Microwave Conference Proceedings, APMC | 2022年 / 2022-November卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Capacitance - Gallium nitride - III-V semiconductors - Insertion losses - Microwave devices - Microwave resonators

引用

页码：722 / 724

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