Sub‑5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

被引：0
|
作者：
Quhe, Ruge [1 ]
Ang, Yee Sin [2 ]
Lu, Jing [3 ,4 ,5 ,6 ,7 ]
Xu, Linqiang [2 ,3 ]
Xu, Lianqiang [8 ]
Li, Qiuhui [3 ]
Fang, Shibo [3 ]
Li, Ying [3 ]
Guo, Ying [9 ]
Wang, Aili [10 ,11 ]
机构：
[1] State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing,100876, China
[2] Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), Singapore,487372, Singapore
[3] State Key Laboratory of Mesoscopic Physics, Department of Physics, Peking University, Beijing,100871, China
[4] Collaborative Innovation Center of Quantum Matter, Beijing,100871, China
[5] Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing,100871, China
[6] Peking University Yangtze Delta Institute of Optoelectronics, Nantong,226000, China
[7] Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing,100871, China
[8] School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan,756000, China
[9] School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong,723001, China
[10] College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou,310027, China
[11] Zhejiang University, University of Illinois at Urbana−Champaign Institute, Zhejiang University, Haining,310027, China
来源：
ACS Applied Electronic Materials | 2024年 / 6卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Field effect transistors - III-V semiconductors - Indium phosphide - Quantum chemistry - Semiconducting indium phosphide - Tensile strain;
D O I：
10.1021/ACSAELM.3C01424
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：426 / 434
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