Electron Tomography of Gate-All-Around Nanowire Transistors

被引：8

作者：

Cherns, P. D. ^{[1
]}

Lorut, F. ^{[2
]}

Dupre, C. ^{[1
]}

Tachi, K. ^{[1
]}

Cooper, D. ^{[1
]}

Chabli, A. ^{[1
,2
]}

Ernst, T. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble, France

[2] ST Microelect, F-38926 Crolles, France

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

关键词：

D O I：

10.1088/1742-6596/209/1/012046

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We present a study of gate-all-around (GAA) Si nanowire transistor structures using high angle annular dark field (HAADF) STEM tomography Device structures have been prepared m needle shaped samples using a focused ion beam (FIB), in order to allow sample rotation to +/- 80 degrees Tomograms are presented, both from a full three channel device structure and also from a single wire test structure, without the hydrogen annealing step It is observed that hydrogen annealing alters the rectangular cross section of the nanowires, narrowing them and smoothing the corners

引用

页数：4

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