An analytical I-V model of SiC double-gate junctionless MOSFETs

被引：0

作者：

Li, Yi ^{[1
]}

Zhou, Tao ^{[1
]}

Guo, Zixuan ^{[1
]}

Yang, Yuqiu ^{[1
]}

Wu, Junyao ^{[1
]}

Cai, Huan ^{[1
]}

Wang, Jun ^{[1
]}

Yin, Jungang ^{[1
]}

Huang, Wenqing ^{[1
]}

Zhang, Miao ^{[1
]}

Hou, Nianxing ^{[1
]}

Liu, Qin ^{[2
]}

Deng, Linfeng ^{[1
]}

机构：

[1] College of Electrical and Information Engineering, Hunan University, Hunan, Asia, Changsha,410082, China

[2] The State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., LTD, Asia, Zhuzhou,412001, China

来源：

Microelectronics Journal | / 154卷

基金：

中国国家自然科学基金;

关键词：

Junction gate field effect transistors - MOS devices - Oxide semiconductors - Poisson distribution - Poisson equation - Semiconducting silicon compounds;

D O I：

10.1016/j.mejo.2024.106445

中图分类号：

学科分类号：

摘要：

引用

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