Analysis of Schottky barrier height in small contacts using a thermionic-field emission model

被引：0
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作者：
Jang, Moongyu [1 ]
Lee, Junghwan [2 ]
机构：
[1] Basic Research Laboratory, ETRI, Daejeon, Korea, Republic of
[2] System IC R and D Division, HYNIX Semiconductor Inc., Cheongju, Korea, Republic of
来源：
| 2002年 / ETRI卷 / 24期
关键词：
Schottky barrier height - Secondary ion mass spectroscopy - Thermionic-field emission model - Transfer matrix method - Wentzel-Kramer-Brillouin approximation;
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