Analysis of Schottky barrier height in small contacts using a thermionic-field emission model

被引：0
|
作者：
Jang, Moongyu [1 ]
Lee, Junghwan [2 ]
机构：
[1] Basic Research Laboratory, ETRI, Daejeon, Korea, Republic of
[2] System IC R and D Division, HYNIX Semiconductor Inc., Cheongju, Korea, Republic of
来源：
| 2002年 / ETRI卷 / 24期
关键词：
Schottky barrier height - Secondary ion mass spectroscopy - Thermionic-field emission model - Transfer matrix method - Wentzel-Kramer-Brillouin approximation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] NUMERICAL MODELING OF ABRUPT HETEROJUNCTIONS USING A THERMIONIC-FIELD EMISSION BOUNDARY-CONDITION
    YANG, KH
    EAST, JR
    HADDAD, GI
    SOLID-STATE ELECTRONICS, 1993, 36 (03) : 321 - 330
  • [22] Accurate evaluation of Cr/n-Si Schottky barrier height using thermionic emission theory and external resistors
    Su, Zih-Chun
    Lin, Ching-Fuh
    INFRARED SENSORS, DEVICES, AND APPLICATIONS XI, 2021, 11831
  • [23] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
    PADOVANI, FA
    SOLID-STATE ELECTRONICS, 1969, 12 (02) : 135 - &
  • [24] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
    CROWELL, CR
    SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &
  • [25] Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors
    Chang, Hsun-Ming
    Fan, Kai-Lin
    Charnas, Adam
    Ye, Peide D.
    Lin, Yu-Ming
    Wu, Chih-, I
    Wu, Chao-Hsin
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (13)
  • [26] CURRENT DENSITY OF THERMIONIC-FIELD EMISSION INTO A PLASMA AT MODERATE FIELDS.
    Ostretsov, I.N.
    Petrosov, V.A.
    Porotnikov, A.A.
    Rodnevich, B.B.
    Soviet Physics, Technical Physics (English translation of Zhurnal Tekhnicheskoi Fiziki), 1974, 19 (05): : 707 - 708
  • [27] Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky-Barrier Devices
    Wong, Calvin Pei Yu
    Troadec, Cedric
    Wee, Andrew T. S.
    Goh, Kuan Eng Johnson
    PHYSICAL REVIEW APPLIED, 2020, 14 (05)
  • [28] Modulation of the Schottky Barrier Height for CMOS advanced contacts
    Menghini, Mariela A.
    Homm, Pia
    Su, Chen-Yi
    Kittl, Jorge A.
    Tomita, Ryuji
    Hegde, Ganesh
    Lee, Joon-Gon
    Hyun, Sangjin
    Bowen, Chris
    Rodder, Mark. S.
    Afanas'ev, Valeri
    Locquet, Jean-Pierre
    MICROELECTRONIC ENGINEERING, 2016, 156 : 82 - 85
  • [29] Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts
    Tan, C. C.
    Chua, C. T.
    Chi, D-Z
    SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES, 2008, 16 (10): : 281 - 286
  • [30] Barrier height determination in homogeneous nonideal Schottky contacts
    Hernández, MP
    Alonso, CF
    Peña, JL
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (08) : 1157 - 1161
12345