Analysis of Schottky barrier height in small contacts using a thermionic-field emission model

被引：0

作者：

Jang, Moongyu ^{[1
]}

Lee, Junghwan ^{[2
]}

机构：

[1] Basic Research Laboratory, ETRI, Daejeon, Korea, Republic of

[2] System IC R and D Division, HYNIX Semiconductor Inc., Cheongju, Korea, Republic of

来源：

| 2002年 / ETRI卷 / 24期

关键词：

Schottky barrier height - Secondary ion mass spectroscopy - Thermionic-field emission model - Transfer matrix method - Wentzel-Kramer-Brillouin approximation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[11] THERMIONIC-FIELD EMISSION THROUGH SILICON SCHOTTKY BARRIERS AT ROOM-TEMPERATURE
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[20] INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHT
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