Barrier height analysis of metal/4H-SiC Schottky contacts

被引：0
|
作者：
Itoh, A
Takemura, O
Kimoto, T
Matsunami, H
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Determination of barrier heights in Au/, Ni/, and Ti/4H-SiC Schottky structures was carried out in detail. The barrier heights were measured by current-voltage, capacitance-voltage characteristics, and internal photoemission spectroscopy. From internal photoemission spectroscopy, the most reliable Schottky barrier heights were obtained. There existed the dependence of barrier height on surface polarity of 4H-SiC (Si- and C-face). The barrier heights were 1.81 V (Au), 1.69 V (Ni), and 1.09 V (Ti) for Si-face, and 2.07 V (Au), 1.87 V (Ni), and 1.25 V (Ti) for C-face, so that the values for C-face are 0.2 similar to 0.3 V higher than those for Si-face. Besides, the ''barrier height pinning'' was not observed in metal/4H-SiC Schottky structures.
引用
收藏
页码：685 / 688
页数：4
相关论文
共 50 条
  • [1] Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts
    Zhang, Teng
    Raynaud, Christophe
    Planson, Dominique
    [J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2019, 85 (01):
  • [2] Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts
    Huang, Lingqin
    Geiod, Rechard
    Wang, Dejun
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [3] Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors
    Osvald, J.
    Hrubcin, L.
    Zat'ko, B.
    [J]. APPLIED SURFACE SCIENCE, 2020, 533
  • [4] Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC
    Defives, D
    Durand, O
    Wyczisk, F
    Noblanc, O
    Brylinski, C
    Meyer, F
    [J]. MICROELECTRONIC ENGINEERING, 2001, 55 (1-4) : 369 - 374
  • [5] Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
    Bolen, M. L.
    Capano, M. A.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (04) : 574 - 580
  • [6] Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes
    M. L. Bolen
    M. A. Capano
    [J]. Journal of Electronic Materials, 2009, 38
  • [7] Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC
    Potapov, A. S.
    Ivanov, P. A.
    Samsonova, T. P.
    [J]. SEMICONDUCTORS, 2009, 43 (05) : 612 - 616
  • [8] Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts
    Pristavu, Gheorghe
    Brezeanu, Gheorghe
    Dan-Theodor, Oneata
    Pascu, Razvan
    Draghici, Florin
    Serbanescu, Matei
    Enache, Andrei
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (04) : 2805 - 2809
  • [9] Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
    Kato, Masashi
    Ono, Hidenori
    Ichimura, Masaya
    Feng, Gan
    Kimoto, Tsunenobu
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (03)
  • [10] Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC
    A. S. Potapov
    P. A. Ivanov
    T. P. Samsonova
    [J]. Semiconductors, 2009, 43 : 612 - 616
12345