Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide

被引：0
|
作者：
Greulich-Weber, S. [1 ]
März, M. [1 ]
Spaeth, J.-M. [1 ]
Mokhov, E.N. [2 ]
Kalabukhova, E.N. [3 ]
机构：
[1] Department of Physics, University of Paderborn, DE-33095 Paderborn, Germany
[2] Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, RU-194021 St.-Petersburg, Russia
[3] Institute Semiconductors, Natl. Academy of Science of Ukraine, Kiev, 252028, Ukraine
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Number:; -; Acronym:; DFG; Sponsor: Deutsche Forschungsgemeinschaft;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Optical centres with local vibrational modes created by high temperature annealing of electron irradiated 4H and 6H silicon carbide
    Steeds, JW
    Furkert, SA
    Sullivan, W
    Hayes, JM
    Wright, NG
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 347 - 350
  • [42] Carrier Removal in Electron Irradiated 4H and 6H SiC
    Mikelsen, Mads
    Grossner, Ulrike
    Bleka, Jan H.
    Monakhov, Edouard V.
    Svensson, Bengt G.
    Yakirnova, Rositza
    Henry, Anne
    Janzen, Erik
    Lebedev, AlexanderA.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 425 - +
  • [43] Accurate measurements of second-order nonlinear optical coefficients of 6H and 4H silicon carbide
    Sato, Hiroaki
    Abe, Makoto
    Shoji, Ichiro
    Suda, Jun
    Kondo, Takashi
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2009, 26 (10) : 1892 - 1896
  • [44] Electrically Active Defects in 3C, 4H, and 6H Silicon Carbide Polytypes: A Review
    Capan, Ivana
    CRYSTALS, 2025, 15 (03)
  • [45] Hydrogen in 6H silicon carbide
    Linnarsson, MK
    Doyle, JP
    Svensson, BG
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 625 - 630
  • [46] Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
    Wagner, M
    Magnusson, B
    Chen, WM
    Janzén, E
    Sörman, E
    Hallin, C
    Lindström, JL
    PHYSICAL REVIEW B, 2000, 62 (24) : 16555 - 16560
  • [47] Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC
    Yan, F.
    Devaty, R. P.
    Choyke, W. J.
    Gali, A.
    Bhat, I. B.
    Larkin, D. J.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 585 - 588
  • [48] Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SIC
    Wagner, M
    Magnusson, B
    Sörman, E
    Hallin, C
    Lindström, JL
    Chen, WM
    Janzén, E
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 663 - 666
  • [49] The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals
    Kamitani, K
    Grimsditch, M
    Nipko, JC
    Loong, CK
    Okada, M
    Kimura, I
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) : 3152 - 3154
  • [50] Comparison of thermally oxidized metal-oxide-semiconductor interfaces on 4H and 6H polytypes of silicon carbide
    Shenoy, JN
    Cooper, JA
    Melloch, MR
    APPLIED PHYSICS LETTERS, 1996, 68 (06) : 803 - 805
12345