Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide

被引：0
|
作者：
Greulich-Weber, S. [1 ]
März, M. [1 ]
Spaeth, J.-M. [1 ]
Mokhov, E.N. [2 ]
Kalabukhova, E.N. [3 ]
机构：
[1] Department of Physics, University of Paderborn, DE-33095 Paderborn, Germany
[2] Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, RU-194021 St.-Petersburg, Russia
[3] Institute Semiconductors, Natl. Academy of Science of Ukraine, Kiev, 252028, Ukraine
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Number:; -; Acronym:; DFG; Sponsor: Deutsche Forschungsgemeinschaft;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Close compensation of 6H and 4H silicon carbide by silicon-to-carbon ratio control
    Mazzola, MS
    Saddow, SE
    Schöner, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 155 - 157
  • [22] Strong Wanie-Stark localization in 6H and 4H silicon carbide polytypes
    Sankin, VI
    Stolichnov, IA
    Maltsev, AA
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (21): : 39 - 44
  • [23] The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide
    Sanchez, EK
    Kopec, A
    Poplawski, S
    Ware, R
    Holmes, S
    Wang, S
    Timmerman, A
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 71 - 74
  • [24] Electrical transport properties of n-type 4H and 6H silicon carbide
    Contreras, S
    Pernot, J
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 555 - 560
  • [25] ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE
    SCHADT, M
    PENSL, G
    DEVATY, RP
    CHOYKE, WJ
    STEIN, R
    STEPHANI, D
    APPLIED PHYSICS LETTERS, 1994, 65 (24) : 3120 - 3122
  • [26] Comparative Monte Carlo study of electron transport in 3C, 4H and 6H silicon carbide
    Mickevicius, R
    Zhao, JH
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 291 - 294
  • [27] Infrared optical properties of 3C, 4H and 6H silicon carbide
    Lindquist, OPA
    Arwin, H
    Henry, A
    Järrendahl, K
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 329 - 332
  • [28] The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide
    Sanchez, E.K.
    Kopec, A.
    Poplawski, S.
    Ware, R.
    Holmes, S.
    Wang, S.
    Timmerman, A.
    Materials Science Forum, 2002, 389-393 (01) : 71 - 74
  • [29] Low-dose aluminum and boron implants in 4H and 6H silicon carbide
    Saks, NS
    Agarwal, AK
    Ryu, SH
    Palmour, JW
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) : 2796 - 2805
  • [30] Damage evolution and recovery in 4H and 6H silicon carbide irradiated with aluminum ions
    Weber, WJ
    Jiang, W
    Zhang, Y
    Hallén, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 191 : 514 - 518
12345