共 50 条
- [32] Neutral silicon vacancy in 6H and 4H SiC Materials Science Forum, 1998, 264-268 (pt 1): : 473 - 476
- [34] Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC Physica B: Condensed Matter, 1999, 273 : 655 - 658
- [35] The neutral silicon vacancy in 6H and 4H SiC SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 473 - 476
- [36] Structure refinement of the silicon carbide polytypes 4H and 6H:: unambiguous determination of the refinement parameters ACTA CRYSTALLOGRAPHICA SECTION A, 2001, 57 : 60 - 67
- [37] Infrared reflection spectroscopy of as-anodized and passivated 6H and 4H porous silicon carbide MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 317 - 322
- [38] Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 941 - 944
- [39] Silicon vacancy related defect in 4H and 6H SiC PHYSICAL REVIEW B, 2000, 61 (04): : 2613 - 2620