Electron paramagnetic resonance of the scandium acceptor in 4H and 6H silicon carbide

被引:0
|
作者
Greulich-Weber, S. [1 ]
März, M. [1 ]
Spaeth, J.-M. [1 ]
Mokhov, E.N. [2 ]
Kalabukhova, E.N. [3 ]
机构
[1] Department of Physics, University of Paderborn, DE-33095 Paderborn, Germany
[2] Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya st. 26, RU-194021 St.-Petersburg, Russia
[3] Institute Semiconductors, Natl. Academy of Science of Ukraine, Kiev, 252028, Ukraine
关键词
Number:; -; Acronym:; DFG; Sponsor: Deutsche Forschungsgemeinschaft;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Dopant activation and surface morphology of ion implanted 4H and 6H silicon carbide
    Capano, MA
    Ryu, S
    Melloch, MR
    Cooper, JA
    Buss, MR
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 370 - 376
  • [32] Neutral silicon vacancy in 6H and 4H SiC
    Sorman, E.
    Chen, W.M.
    Son, N.T.
    Hallin, C.
    Lindstrom, J.L.
    Monemar, B.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 473 - 476
  • [33] Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
    Son, NT
    Hai, PN
    Huy, PT
    Gregorkiewicz, T
    Ammerlaan, CAJ
    Lindström, JL
    Chen, WM
    Monemar, B
    Janzén, E
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 655 - 658
  • [34] Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
    Son, N.T.
    Hai, P.N.
    Huy, P.T.
    Gregorkiewicz, T.
    Ammerlaan, C.A.J.
    Lindström, J.L.
    Chen, W.M.
    Monemar, B.
    Janzén, E.
    Physica B: Condensed Matter, 1999, 273 : 655 - 658
  • [35] The neutral silicon vacancy in 6H and 4H SiC
    Sorman, E
    Chen, WM
    Son, NT
    Hallin, C
    Lindstrom, JL
    Monemar, B
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 473 - 476
  • [36] Structure refinement of the silicon carbide polytypes 4H and 6H:: unambiguous determination of the refinement parameters
    Bauer, A
    Reischauer, P
    Kräusslich, J
    Schell, N
    Matz, W
    Goetz, K
    ACTA CRYSTALLOGRAPHICA SECTION A, 2001, 57 : 60 - 67
  • [37] Infrared reflection spectroscopy of as-anodized and passivated 6H and 4H porous silicon carbide
    Spanier, JE
    Herman, IP
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 317 - 322
  • [38] Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide
    Korolkov, O
    Rang, T
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 941 - 944
  • [39] Silicon vacancy related defect in 4H and 6H SiC
    Sörman, E
    Son, NT
    Chen, WM
    Kordina, O
    Hallin, C
    Janzén, E
    PHYSICAL REVIEW B, 2000, 61 (04): : 2613 - 2620
  • [40] Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles
    Protik, Nakib Haider
    Katre, Ankita
    Lindsay, Lucas
    Carrete, Jesus
    Mingo, Natalio
    Broido, David
    MATERIALS TODAY PHYSICS, 2017, 1 : 31 - 38