Hydrogen in 6H silicon carbide

被引：16
|
作者：
Linnarsson, MK
Doyle, JP
Svensson, BG
机构：
来源：
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷
关键词：
D O I：
10.1557/PROC-423-625
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
6H polytype silicon carbide (SIG) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 degrees C and 1150 degrees C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 degrees C. A diffusion coefficient of similar to 10(-14) cm(2)/s is extracted at 800 degrees C with an approximate activation energy of similar to 3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900 degrees C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.
引用
收藏
页码：625 / 630
页数：6
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