Cobalt silicide formation on 6H silicon carbide

被引：0
|
作者：
Porto, A.O. [1 ]
Boyanov, B.I. [1 ]
Sayers, D.E. [1 ]
Nemanich, R.J. [1 ]
机构：
[1] Department of Physics, Box 7518, North Carolina State University, Raleigh, NC 27695-7518, United States
来源：
Journal of Synchrotron Radiation | 1999年 / 6卷 / 03期
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摘要：
Cobalt films (1, 25 and 100 A) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 A Co films. In the 25 and 100 A Co films only Co-Co bonds were identified. The XRD pattern of the 100 A Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.
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页码：188 / 189
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