Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC

被引：3

作者：

Yan, F. ^{[1
]}

Devaty, R. P.

Choyke, W. J.

Gali, A.

Bhat, I. B.

Larkin, D. J.

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[4] NASA, Glenn Res Ctr, Sensors & Elect Technol, Cleveland, OH 44135 USA

来源：

Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷

关键词：

phosphorus; photoluminescence; carbon sites; silicon sites;

D O I：

10.4028/www.scientific.net/MSF.527-529.585

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New lines are observed in the photoluminescence of 6H and 4H SiC epitaxial layers grown in cold wall CVD reactors and doped with phosphorus. These lines are associated with neutral phosphorus donor four particle bound exciton complexes with the phosphorus substituting on both the carbon and silicon sublattices. Assignments are made for the (h) hexagonal and (k) cubic sites of the phosphorus donor substituting on the two SiC sublattices.

引用

页码：585 / 588

页数：4

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