Further investigation of silicon vacancy-related luminescence in 4H and 6H SiC

被引：2
|
作者：
Steeds, JW [1 ]
Furkert, S [1 ]
Hayes, JM [1 ]
Sullivan, W [1 ]
机构：
[1] Univ Bristol, Dept Phys, Bristol BS8 1TL, Avon, England
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词：
electron irradiation; photoluminescence microscopy; silicon vacancies;
D O I：
10.4028/www.scientific.net/MSF.457-460.561
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence signatures of silicon vacancies in 4H and 6H SiC have been re-examined, comparing the results obtained by near-threshold electron irradiation (300 keV) with those obtained at 1 MeV. Annealing experiments have been performed to investigate the temperatures at which the signatures are lost in n- and p-type material.
引用
收藏
页码：561 / 564
页数：4
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