TID effects on a 110 nm CMOS technology for fully depleted monolithic sensors

被引：0
|
作者：
Ratti, L. [1 ,2 ]
Giroletti, S. [1 ,2 ]
Manghisoni, M. [3 ]
Mattiazzo, S. [4 ,5 ]
Re, V. [2 ,3 ]
Torilla, G. [1 ,2 ]
Traversi, G. [2 ,3 ]
Vacchi, C. [1 ,2 ]
机构：
[1] Univ Pavia, Dipartimento Ingn Ind & Informaz, I-27100 Pavia, Italy
[2] INFN Pavia, I-27100 Pavia, Italy
[3] Dipartimento Ingn Sci & Applicate, I-24044 Dalmine, BG, Italy
[4] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy
[5] INFN Padova, I-35131 Padua, Italy
来源：
2022 22ND EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, RADECS | 2022年
关键词：
Total ionizing dose; electronic noise; CMOS; analog front-end;
D O I：
10.1109/RADECS55911.2022.10412411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates the effects of ionizing radiation on NMOS and PMOS transistors belonging to a 110 nm CMOS technology used in the design of fully depleted sensors for applications to particle and astro-particle physics and medical radio-diagnostic equipment. The work is focused in particular on electronic noise, also as a tool for studying the degradation process induced by total ionizing dose (TID) in the analog performance of the technology. The characterization results can be leveraged for the design of low noise, rad-hard front-end processors for monolithic sensors in a 110 nm process.
引用
收藏
页码：91 / 94
页数：4
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