RF filters in SiGeBiCMOS technology and fully depleted silicon-on-insulator CMOS technology

This paper presents two integrated nonreflective bandpass filters. The filters are implemented in a Silicon Germanium (SiGe) BiCMOS technology and Fully Depleted Silicon on Insulator (FDSOI) CMOS technology. The purpose of these circuits is to explore the feasibility of passive filter applications on silicon substrates while maintaining low insertion loss and 50 Ohm impedance matching. The SiGe-based filter achieved 3.3-4.2 dB insertion loss across 3.54.5 GHz with input return loss better than similar to 10 dB from 1-10 GHz. The FDSOI filter simulation yielded an insertion loss of 4.5 dB across the design frequency of 3.7-4.3 GHz.