RF filters in SiGeBiCMOS technology and fully depleted silicon-on-insulator CMOS technology

被引：0

作者：

Mbuko, O ^{[1
]}

Orlando, P

Axtell, H

Cerny, C

Creech, G

Friddell, T

James, T

Kormanyos, B

Mattamana, A

Neidhard, R

Nykiel, E

Patel, VJ

Selke, D

Quach, T

机构：

[1] USAF, Res Lab, 2241 Avion Circle,Bldg 620, Wright Patterson AFB, OH 45433 USA

[2] Boeing Phantom Works, Solid State Elect Dev, Seattle, WA 98124 USA

来源：

2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年

关键词：

CMOS; FDSOI; silicon germanium; filters; S-; band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two integrated nonreflective bandpass filters. The filters are implemented in a Silicon Germanium (SiGe) BiCMOS technology and Fully Depleted Silicon on Insulator (FDSOI) CMOS technology. The purpose of these circuits is to explore the feasibility of passive filter applications on silicon substrates while maintaining low insertion loss and 50 Ohm impedance matching. The SiGe-based filter achieved 3.3-4.2 dB insertion loss across 3.54.5 GHz with input return loss better than similar to 10 dB from 1-10 GHz. The FDSOI filter simulation yielded an insertion loss of 4.5 dB across the design frequency of 3.7-4.3 GHz.

引用

页码：163 / +

页数：2

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