Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

被引：2

作者：

Schioppa, Enrico Junior ^{[1
]}

Bates, Richard ^{[4
]}

Buttar, Craig ^{[4
]}

Dalla, Marco ^{[2
,3
]}

Van Hoorne, Jacobus Willem ^{[1
]}

Kugathasan, Thanushan ^{[1
]}

Maneuski, Dzmitry ^{[4
]}

Tobon, Cesar Augusto Marin ^{[1
]}

Musa, Luciano ^{[1
]}

Pernegger, Heinz ^{[1
]}

Riedler, Petra ^{[1
]}

Riegel, Christian ^{[1
,5
]}

Sbarra, Carla ^{[2
,3
]}

Schaefer, Douglas Michael ^{[1
]}

Sharma, Abhishek ^{[1
,6
]}

Snoeys, Walter ^{[1
]}

Sanchez, Carlos Solans ^{[1
]}

机构：

[1] CERN, Expt Phys Dept, CH-1211 Geneva 23, Switzerland

[2] Univ Bologna, I-40127 Bologna, Italy

[3] INFN, I-40127 Bologna, Italy

[4] Univ Glasgow, SUPA Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[5] Univ Wuppertal, Gaussstr 20, Wuppertal, Germany

[6] Univ Oxford, Oxford OX1 3PA, England

来源：

2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2017年

关键词：

D O I：

10.1109/RADECS.2017.8696182

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 10(15) n(eq)/cm(2).

引用

页码：42 / 48

页数：7

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