A 6-b 600 MS/s SAR ADC with a new switching procedure of 2-b/stage and selflocking comparators

被引:0
|
作者
向济璇
陈迟晓
叶凡
许俊
李宁
任俊彦
机构
[1] State Key Laboratory of ASIC and System
[2] Fudan
关键词
D O I
暂无
中图分类号
TN792 [];
学科分类号
摘要
This paper presents a 6-b successive approximation register(SAR) ADC at the sampling rate of600 MHz in a 65 nm CMOS process.To pursue high speed,this design employs the idea of the 2-b/stage.Based on this,the proposed structure with a new switching procedure is presented.Compared with traditional structures,it optimizes problems cause by mismatches of DACs and saves power.In addition,this paper takes advantage of distributed comparator topology to improve the speed,while the proposed structure and self-locking technique lighten the kickback and offset caused by multiple comparators.The measurement results demonstrate that the signal-tonoise plus distortion ratio(SNDR) is 32.13 dB and the spurious-free dynamic range(SFDR) is 44.05 dB at 600MS/s with 5.6 MHz input.By contrast,the SNDR/SFDR respectively drops to 28.46/39.20 dB with Nyquist input.Fabricated in a TSMC 65 nm process,the SAR ADC core occupies an area of 0.045 mm2 and consumes power of5.01 mW on a supply voltage of 1.2 V resulting in a figure of merit of 252 fJ/conversion-step.
引用
收藏
页码:148 / 154
页数:7
相关论文
共 50 条
  • [11] A 6b 2b/cycle SAR ADC beyond 1GS/s with Hybrid DAC Structure and Low Kickback Noise Comparators
    Zhao, Long
    Deng, Chenxi
    Cheng, Yuhua
    PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
  • [12] A 400-Msample/s, 6-b CMOS folding and interpolating ADC
    Flynn, MP
    Sheahan, B
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) : 1932 - 1938
  • [13] Background Calibration Using Noisy Reference ADC for a 12 b 600 MS/s 2xTI SAR ADC in 14 nm CMOS FinFET
    Luu, Danny
    Kull, Lukas
    Toifl, Thomas
    Menolfi, Christian
    Braendli, Matthias
    Francese, Pier Andrea
    Morf, Thomas
    Kossel, Marcel
    Yueksel, Hazar
    Cevrero, Alessandro
    Ozkaya, Ilter
    Huang, Qiuting
    ESSCIRC 2017 - 43RD IEEE EUROPEAN SOLID STATE CIRCUITS CONFERENCE, 2017, : 183 - 186
  • [14] 6-b 1.6-GS/s Flash ADC with Distributed Track-and-Hold Pre-Comparators in a 0.18μm CMOS
    Chen, Chun-Chieh
    Chung, Yu-Lun
    Chiu, Chen-T
    ISSCS 2009: INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS, VOLS 1 AND 2, PROCEEDINGS,, 2009, : 521 - 524
  • [15] A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
    沈易
    刘术彬
    朱樟明
    Journal of Semiconductors, 2016, (06) : 140 - 144
  • [16] A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
    沈易
    刘术彬
    朱樟明
    Journal of Semiconductors, 2016, 37 (06) : 140 - 144
  • [17] A 10-bit 50-MS/s SAR ADC With a Monotonic Capacitor Switching Procedure
    Liu, Chun-Cheng
    Chang, Soon-Jyh
    Huang, Guan-Ying
    Lin, Ying-Zu
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (04) : 731 - 740
  • [18] A 0.95-mW 6-b 700-MS/s Single-Channel Loop-Unrolled SAR ADC in 40-nm CMOS
    Chen, Long
    Ragab, Kareem
    Tang, Xiyuan
    Song, Jeonggoo
    Sanyal, Arindam
    Sun, Nan
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2017, 64 (03) : 244 - 248
  • [19] A 1.0-V 6-b 40 MS/s time-domain flash ADC in 0.18 μm CMOS
    Huang, Guanzhong
    Lin, Pingfen
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2013, 77 (02) : 285 - 289
  • [20] A 1.0-V 6-b 40 MS/s time-domain flash ADC in 0.18 μm CMOS
    Guanzhong Huang
    Pingfen Lin
    Analog Integrated Circuits and Signal Processing, 2013, 77 : 285 - 289