FORMATION OF DEFECT COMPLEXES AS A RESULT OF STIMULATED DIFFUSION OF PHOSPHORUS IN SILICON

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作者：
GAPONOV, SV
KALYAGIN, MA
STRIKOVSKII, MD
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 09期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：993 / 996
页数：4
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