MODELING OF DEFECT PHOSPHORUS PAIR DIFFUSION IN PHOSPHORUS-IMPLANTED SILICON

被引：13
|
作者：
JAGER, HU
FEUDEL, T
ULBRICHT, S
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 116卷 / 02期
关键词：
D O I：
10.1002/pssa.2211160215
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：571 / 581
页数：11
相关论文
共 50 条
  • [1] DISLOCATION NETWORKS IN PHOSPHORUS-IMPLANTED SILICON
    TAMURA, M
    PHILOSOPHICAL MAGAZINE, 1977, 35 (03): : 663 - 691
  • [2] SECONDARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON
    TAMURA, M
    APPLIED PHYSICS LETTERS, 1973, 23 (12) : 651 - 653
  • [3] TERTIARY DEFECTS IN PHOSPHORUS-IMPLANTED SILICON
    TAMURA, M
    YOSHIHIRO, N
    IKEDA, T
    APPLIED PHYSICS LETTERS, 1975, 27 (08) : 427 - 429
  • [4] FLASH LAMP ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
    BUDINOV, H
    STAVROV, V
    BURKOVA, R
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (02): : K131 - K134
  • [5] ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON .2.
    BICKNELL, RW
    PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 911 - &
  • [6] ANNEALING CHARACTERISTICS OF BORON-IMPLANTED AND PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON
    SETO, JYW
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5167 - 5170
  • [7] LOW-TEMPERATURE ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON
    MIYAO, M
    NATSUAKI, N
    YOSHIHIRO, N
    TAMURA, M
    TOKUYAMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 57 - 62
  • [8] Impact of Iron Precipitation on Phosphorus-Implanted Silicon Solar Cells
    Laine, Hannu S.
    Vahanissi, Ville
    Morishige, Ashley E.
    Hofstetter, Jasmin
    Haarahiltunen, Antti
    Lai, Barry
    Savin, Hele
    Fenning, David P.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (05): : 1094 - 1102
  • [9] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON
    BLOOD, P
    DEARNALEY, G
    WILKINS, MA
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5123 - 5128
  • [10] PULSED ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
    INADA, T
    SUGIYAMA, T
    OKANO, N
    ISHIKAWA, Y
    ELECTRONICS LETTERS, 1980, 16 (02) : 54 - 55
12345