MODELING OF DEFECT PHOSPHORUS PAIR DIFFUSION IN PHOSPHORUS-IMPLANTED SILICON

被引：13
|
作者：
JAGER, HU
FEUDEL, T
ULBRICHT, S
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 116卷 / 02期
关键词：
D O I：
10.1002/pssa.2211160215
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：571 / 581
页数：11
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