FLASH LAMP ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

被引：3
|
作者：
BUDINOV, H
STAVROV, V
BURKOVA, R
机构：
[1] Inst for Micro- and Optoelectronics, Bulgaria
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 114卷 / 02期
关键词：
Electric Conductivity - Heat Treatment--Annealing;
D O I：
10.1002/pssa.2211140242
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Due to the depth diffusion of impurities during conventional furnace annealing it was impossible to obtain a completely activated layer without redistribution of the implants in the wafer. The phosphorus-implanted FLA layers obtained in this study are completely activated without noticeable diffusion. The radiation damage is not completely annealed, but the leakage currents of the diode structures are comparable to furnace annealed structures. By using heavily doped FLA layers one can form shallow p-n junctions.
引用
收藏
页码：K131 / K134
页数：4
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