FORMATION OF DEFECT COMPLEXES AS A RESULT OF STIMULATED DIFFUSION OF PHOSPHORUS IN SILICON

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作者：

GAPONOV, SV

KALYAGIN, MA

STRIKOVSKII, MD

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 09期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：993 / 996

页数：4

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