ELECTRICAL PROPERTIES OF PHOSPHORUS DOPED SILICON LAYERS OBTAINED BY ION-IMPLANTATION THROUGH A PASSIVATING OXIDE

被引：2
|
作者：
VERJANS, J [1 ]
VANOVERS.R [1 ]
PATTYN, H [1 ]
DEKEERSM.R [1 ]
机构：
[1] CATHOLIC UNIV LOUVAIN,DEPT ELEKTROTECH,LAB FYS ELEKTR VAN DE HALFGELEIDERS,HEVERLEE 3030,BELGIUM
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 07期
关键词：
D O I：
10.1016/0038-1101(73)90174-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：779 / 785
页数：7
相关论文
共 50 条
  • [41] RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS
    BLUNT, RT
    SWEDA, R
    SANDERS, IR
    [J]. VACUUM, 1984, 34 (1-2) : 281 - 284
  • [42] ANISOTROPIC ETCHANTS INHIBITING PROPERTIES OF SILICON-NITRIDE COMPOUND LAYERS PRODUCED BY ION-IMPLANTATION
    GUEORGUIEV, VK
    POPOVA, LI
    PETROV, IN
    STOEV, IG
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 865 - 869
  • [43] PROPERTIES OF BURIED SIC LAYERS PRODUCED BY CARBON ION-IMPLANTATION IN (100) BULK SILICON AND SILICON-ON-SAPPHIRE
    GOLECKI, I
    KROKO, L
    GLASS, HL
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (05) : 315 - 321
  • [44] SYNTHESIS OF SILICON DIOXIDE LAYERS BY HIGH-DOSE ION-IMPLANTATION
    GILL, SS
    [J]. RADIATION EFFECTS LETTERS, 1984, 85 (02): : 67 - 74
  • [45] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION
    BOURGUET, P
    DUPART, JM
    LETIRAN, E
    AUVRAY, P
    GUIVARCH, A
    SALVI, M
    PELOUS, G
    HENOC, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6169 - 6175
  • [46] Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour
    Chauhan, AR
    Bhatt, G
    Yadav, AD
    Dubey, SK
    Rao, TKG
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 212 : 451 - 457
  • [47] ELECTRICAL-PROPERTIES OF SILICON-NITRIDE AND SILICON-OXIDE THIN-FILMS FORMED BY LOW-ENERGY ION-IMPLANTATION
    FURUMURA, Y
    NOUE, S
    MAEDA, M
    TAKAGI, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C80 - C80
  • [48] SILICON OPTICAL SENSORS FABRICATED THROUGH MASKED ION-IMPLANTATION
    SILARD, AP
    [J]. SENSORS AND ACTUATORS, 1985, 7 (03): : 177 - 187
  • [49] EVALUATION OF ELECTRICAL-PROPERTIES OF VANADIUM SILICIDE SILICON SCHOTTKY DIODES FORMED BY ION-IMPLANTATION
    SALVI, VP
    NARSALE, AM
    VIDWANS, S
    RANGWALA, AA
    ARORA, BM
    JAIN, AK
    KULDEEP
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1124 - 1128
  • [50] RESULTS OF ION-IMPLANTATION INTO SILICON IN THE 100 MEV RANGE .2. ELECTRICAL-PROPERTIES
    FAHRNER, WR
    HEIDEMANN, K
    SCHOTTLE, P
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01): : 121 - 125
12345