EVALUATION OF ELECTRICAL-PROPERTIES OF VANADIUM SILICIDE SILICON SCHOTTKY DIODES FORMED BY ION-IMPLANTATION

Vanadium silicide Schottky diodes are fabricated using high-dose ion implantation on p-type single-crystal silicon substrates. Their electrical properties are evaluated using the resistivity, current-voltage (I-V), and capacitance-voltage (C-V) techniques. The resistivity of these layers decreases on annealing, and a metallic behaviour of the silicide surface layer is observed. The temperature coefficient of resistance (alpha) is found to be 6.8 x 10(-3)/K. The barrier height phi-b measured using the I-V technique is 0.75 eV. This high value of phi-b is the result of formation of inversion layer at the silicide-silicon interface. On annealing the diode at 750-degrees-C for 30 min, the ideality factor n improves to 1.01 indicating that the current transport is mainly by the thermionic emission process across the junction. The phi-b value measured using the C-V method differs from that obtained by I-V measurements. This discrepancy is attributed to the presence of multiphase silicide contact and the implant damage.