FORMATION OF SCHOTTKY JUNCTIONS IN SILICON BY ION-IMPLANTATION

被引：3
|
作者：
BOLLMANN, J
KLOSE, H
MERTENS, A
机构：
[1] Humboldt-Univ zu Berlin, Berlin, East Ger, Humboldt-Univ zu Berlin, Berlin, East Ger
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 97卷 / 01期
关键词：
D O I：
10.1002/pssa.2210970154
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4
引用
收藏
页码：K95 / K99
页数：5
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