共 50 条
- [1] CHARACTERISTICS OF SHALLOW P+/N JUNCTIONS FORMED IN SILICON BY DUAL ION-IMPLANTATION[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C327 - C327TSAUR, BYANDERSON, CH
- [2] FORMATION OF SHALLOW P+-N JUNCTIONS BY DUAL GE+/B+ IMPLANTATION[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 413 - 416FERREIRO, ABIASSE, BPAPON, AMPONTCHARRA, JTRUCHE, R
- [3] ELECTRICAL-PROPERTIES OF SHALLOW P+-N JUNCTIONS FORMED BY BF2 ION-IMPLANTATION IN GERMANIUM PREAMORPHIZED SILICON[J]. APPLIED PHYSICS LETTERS, 1988, 52 (04) : 281 - 283OZTURK, MCWORTMAN, JJ
- [4] ION-IMPLANTATION TECHNIQUE FOR SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT[J]. THIN SOLID FILMS, 1983, 104 (3-4) : 383 - 389TSAUR, BYANDERSON, CH
- [5] SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT BY AN ION-IMPLANTATION TECHNIQUE[J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 877 - 879TSAUR, BYANDERSON, CH
- [6] ION-IMPLANTATION - A COMPARISON OF 3 TECHNIQUES FOR PROFILING ULTRASHALLOW P+-N JUNCTIONS[J]. SOLID STATE TECHNOLOGY, 1993, 36 (01) : 45 - &FELCH, SBBRENNAN, RCORCORAN, SFWEBSTER, G
- [7] SUB-100-NM P+-N SHALLOW JUNCTIONS FABRICATED BY GROUP-III DUAL ION-IMPLANTATION AND RAPID THERMAL ANNEALING[J]. APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1790 - 1792LIN, CMSTECKL, AJCHOW, TP
- [8] FABRICATION OF SUBMICROMETER PMOSFETS WITH SUB-100NM P+-N SHALLOW JUNCTIONS USING GROUP-III DUAL ION-IMPLANTATION[J]. SOLID-STATE ELECTRONICS, 1990, 33 (04) : 472 - 474LIN, CMSTECKL, AJ
- [9] Effects of nitrogen implantation in silicon for shallow p+-n junction formation[J]. APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1833 - 1835Kang, CYCho, WJKang, DGLee, YJHwang, JM
- [10] FORMATION OF SCHOTTKY JUNCTIONS IN SILICON BY ION-IMPLANTATION[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K95 - K99BOLLMANN, JKLOSE, HMERTENS, A