DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON

被引：56
|
作者：
TSAUR, BY
ANDERSON, CH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期
关键词：
D O I：
10.1063/1.331908
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：6336 / 6339
页数：4
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