FORMATION AND CHARACTERIZATION OF SHALLOW JUNCTIONS BY THROUGH-FILM ION-IMPLANTATION IN GAAS

被引：1

作者：

SHEN, HL ^{[1
]}

XU, HL ^{[1
]}

XIA, GQ ^{[1
]}

ZOU, SC ^{[1
]}

ZHOU, ZY ^{[1
]}

JIANG, BY ^{[1
]}

LIU, XH ^{[1
]}

机构：

[1] ACAD SINICA,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0168-583X(93)96210-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Plasma-enhanced chemical vapor deposited Si3N4 thin film with a thickness of 140 nm was used as a mask to form shallow junctions by Si ion implantation. The implantation energy ranged from 60 to 120 keV and the doses were 4 x 10(14) cm-2 and 1 x 10(15) cm-2. Rapid thermal annealing was carried out at temperatures ranging from 850 up to 1050-degrees-C for 5 s. The active layers were characterized by HL5900 Stripping Hall System. Junctions as shallow as 30 to 200 nm were formed with electron concentrations of about 10(18) cm-3 . It was found that the electron concentrations at the depth close to the surface were anomalously lower than the results obtained by TRIM'91 program simulation. By coimplantation of P ions, the activation efficiency of silicon increased greatly. The electron concentration profile configuration fits well the simulated one. An electron concentration as high as about 10(19) cm-3 was obtained near the surface.

引用

页码：687 / 690

页数：4

共 50 条

[1] THE THROUGH-FILM IMPLANTATION ON GAAS
KAO, CH
HUANG, FS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : C452 - C452
[2] Ion-implantation issues in the formation of shallow junctions in germanium
Simoen, E.
Satta, A.
D'Amore, A.
Janssens, T.
Clarysse, T.
Martens, K.
De Jaeger, B.
Benedetti, A.
Hoflijk, I.
Brijs, B.
Meuris, M.
Vandervorst, W.
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 634 - 639
[3] VERY SHALLOW JUNCTIONS FORMED BY ION-IMPLANTATION
WORTMAN, JJ
OZTURK, MC
HONG, SN
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S26 - S26
[4] RAPID THERMAL ANNEALING OF THE THROUGH-FILM SILICON IMPLANTATION ON GAAS
HUANG, FS
CHEN, WS
HSU, TM
LEE, CW
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2): : 1003 - 1006
[5] SHALLOW JUNCTIONS BY ION-IMPLANTATION AND RAPID THERMAL ANNEALING
HILL, C
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 348 - 358
[6] FORMATION OF SCHOTTKY JUNCTIONS IN SILICON BY ION-IMPLANTATION
BOLLMANN, J
KLOSE, H
MERTENS, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K95 - K99
[7] DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON
TSAUR, BY
ANDERSON, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6336 - 6339
[8] CHARACTERIZATION AND SIMULATION OF SI ION-IMPLANTATION IN GAAS
BINDAL, A
HWU, R
WANG, KL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C327 - C327
[9] Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms-Range Flash Lamp Annealing
Duan, Juanmei
Wang, Mao
Vines, Lasse
Boettger, Roman
Helm, Manfred
Zeng, Yu-Jia
Zhou, Shengqiang
Prucnal, Slawomir
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (08):
[10] ION-IMPLANTATION IN GAAS
PEARTON, SJ
POATE, JM
SETTE, F
GIBSON, JM
JACOBSON, DC
WILLIAMS, JS
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 369 - 380

← 1 2 3 4 5 →