RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS

被引：4
|
作者：
BLUNT, RT
SWEDA, R
SANDERS, IR
机构：
来源：
VACUUM | 1984年 / 34卷 / 1-2期
关键词：
D O I：
10.1016/0042-207X(84)90142-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：281 / 284
页数：4
相关论文
共 50 条
  • [1] ANALYSIS OF BURIED NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION
    FROSE, D
    KOLLEWE, D
    [J]. SILICON NITRIDE 93, 1994, 89-9 : 749 - 749
  • [2] MODELING OF THE FORMATION OF BURIED DIELECTRIC LAYERS BY ION-IMPLANTATION
    JAGER, HU
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 67 - 72
  • [3] ION-IMPLANTATION IN TUNGSTEN LAYERS
    HARA, T
    CHEN, SC
    ANDO, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3139 - 3142
  • [4] ION-IMPLANTATION INTO (HG,CD)TE THROUGH DIELECTRIC ENCAPSULANTS
    DEUTSCHER, NF
    ROEDEL, RJ
    MCINTYRE, L
    LEAVITT, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1143 - 1146
  • [5] RECOIL MIXING IN HIGH-FLUENCE ION-IMPLANTATION
    LITTMARK, U
    HOFER, WO
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 177 - 181
  • [6] CHARACTERIZATION OF SURFACE-LAYERS PRODUCED BY ION-IMPLANTATION OF NITROGEN IN BULK ALUMINUM
    MCCUNE, RC
    DONLON, WT
    PLUMMER, HK
    TOTH, L
    KUNZ, FW
    [J]. THIN SOLID FILMS, 1989, 168 (02) : 263 - 280
  • [7] ION-IMPLANTATION PROFILES IN BUBBLE GARNETS
    GERARD, P
    DELAYE, MT
    DANIELOU, R
    [J]. THIN SOLID FILMS, 1982, 88 (01) : 75 - 79
  • [8] Carbon onions produced by ion-implantation
    Cabioc'h, T
    Jaouen, M
    Denanot, MF
    Riviere, JP
    Delafond, J
    Girard, JC
    [J]. ELECTRONIC PROPERTIES OF NOVEL MATERIALS - PROGRESS IN MOLECULAR NANOSTRUCTURES: XII INTERNATIONAL WINTERSCHOOL, 1998, 442 : 430 - 434
  • [9] AMORPHOUS GAP PRODUCED BY ION-IMPLANTATION
    SHIMADA, T
    KATO, Y
    SHIRAKI, Y
    KOMATSUBARA, KF
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (03) : 305 - 313
  • [10] ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION
    KATO, Y
    SHIMADA, T
    SHIRAKI, Y
    KOMATSUB.KF
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1044 - 1049
12345